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Please use this identifier to cite or link to this item: https://epub.vgu.edu.vn/handle/dlibvgu/109
DC FieldValueLanguage
dc.contributor.authorTuan V.Vuen_US
dc.contributor.authorNguyen T. T.Anhen_US
dc.contributor.authorD.M. Hoaten_US
dc.contributor.authorDuy P.Tranen_US
dc.contributor.authorTong Duy Hienen_US
dc.contributor.authorHai L. Luongen_US
dc.contributor.authorLe M. Hieuen_US
dc.contributor.authorChuong V.Nguyenen_US
dc.contributor.authorHuynh V.Phucen_US
dc.contributor.authorNguyen T.T. Binhen_US
dc.contributor.authorNguyen N. Hieuen_US
dc.date.accessioned2020-03-12T16:55:19Z-
dc.date.available2020-03-12T16:55:19Z-
dc.date.issued2020-
dc.identifier.urihttp://epub.vgu.edu.vn/handle/dlibvgu/109-
dc.description.abstractIn this work, we study the electronic, optical, and photocatalytic properties of fully hydrogenated GeC monolayer under strain engineering and external electric field using first-principles investigations. Our calculations demonstrate that at the equilibrium state, fully hydrogenated GeC monolayer is a indirect-semiconductor with band gap of 3.493 eV and it possesses photocatalytic characteristics for water splitting and in particular, photocatalytic activities can be enhanced by a negative electric field under ultraviolet light. We can control the band gap of fully hydrogenated GeC monolayer by biaxial strain or external electric field and semiconductor–metal phase transition happens at certain elongation of biaxial strain. Compared to pure monolayer GeC, the fully hydrogenation causes optical absorption peaks of GeC shifting to a higher energy region. While the optical spectra of the fully hydrogenated GeC monolayer are strongly dependent on the strain, the effect of the electric field on them is negligible. Our findings can provide useful information for the applicability of fully hydrogenated GeC monolayer in nanoelectronic devices and photocatalytic water splitting.In this work, we study the electronic, optical, and photocatalytic properties of fully hydrogenated GeC monolayer under strain engineering and external electric field using first-principles investigations. Our calculations demonstrate that at the equilibrium state, fully hydrogenated GeC monolayer is a indirect-semiconductor with band gap of 3.493 eV and it possesses photocatalytic characteristics for water splitting and in particular, photocatalytic activities can be enhanced by a negative electric field under ultraviolet light. We can control the band gap of fully hydrogenated GeC monolayer by biaxial strain or external electric field and semiconductor–metal phase transition happens at certain elongation of biaxial strain. Compared to pure monolayer GeC, the fully hydrogenation causes optical absorption peaks of GeC shifting to a higher energy region. While the optical spectra of the fully hydrogenated GeC monolayer are strongly dependent on the strain, the effect of the electric field on them is negligible. Our findings can provide useful information for the applicability of fully hydrogenated GeC monolayer in nanoelectronic devices and photocatalytic water splitting.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica E: Low-dimensional Systems and Nanostructuresen_US
dc.relation.ispartofseriesVol. 117;-
dc.subjectMonolayer germanium carbideen_US
dc.subjectFully hydrogenationen_US
dc.subjectElectronic and optical propertiesen_US
dc.subjectPhotocatalytic water splittingen_US
dc.subjectFirst-principles calculationsen_US
dc.titleElectronic, optical and photocatalytic properties of fully hydrogenated GeC monolayeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physe.2019.113857-
dc.relation.journaltypeSCI (Q2)en_US
item.fulltextNo Fulltext-
item.languageiso639-1other-
item.grantfulltextnone-
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